Method for growing continuous diamond films

Details Method for growing continuous diamond films Method for growing continuous diamond films

1993-03-23

1995-08-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Fully-sealed or vacuum-maintained chamber

117929, 423446, C30B 2302

Patent

active

054410134

ABSTRACT:
In contrast to previous approaches, the present inventors have discovered that diamond films can be grown by carbon CVT reactions occurring exclusively in the exothermic regime, where the lower temperature (<1500.degree.C.) conditions considerably simplify the equilibrium gas phase chemistry. Under these conditions of a small temperature gradient and short transport distance between the source and substrate, supersaturation of the gas phase with regard to graphite and diamond does not attain sufficiently high values to induce spontaneous homonucleation of graphite and diamond in the gas phase. With this process, temperatures as low as 680.degree.C. were found to be sufficient to induce the growth of continuous diamond films free of non-diamond allotropes.

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