Fishing – trapping – and vermin destroying
Patent
1993-04-16
1996-02-20
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
117 89, 117 92, 437107, 437946, 148DIG17, H01L 2120
Patent
active
054928605
ABSTRACT:
A method of growing a layer of a III-V compound semiconductor on a silicon substrate comprises an oxide layer removing step of removing an oxide layer on a surface of the silicon substrate at a first temperature, a low-temperature grown layer forming step of forming a low-temperature grown layer of the III-V compound semiconductor on the silicon substrate while introducing a source gas for Group III and a source gas for Group V at a second temperature lower than the first temperature, and a single crystal layer growing step of growing a single crystal layer of the Group III-V compound semiconductor on the low-temperature grown layer while introducing the source gas for Group III and the source gas for Group V at a third temperature higher than the second temperature and lower than the first temperature. The introduction of the source gas for Group V being started between the oxide layer removing step and the low-temperature grown layer forming step and at a predetermined temperature lower than the first temperature and higher than the third temperature, at which the first temperature arrives while being lowered to the second temperature. The surface of a silicone substrate is prevented from contamination before the formation of the low-temperature grown layer. A III-V compound semiconductor layer which is superior in crystal perfection and surface morphology can be formed.
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Miyagaki Shinji
Ohkubo Satoshi
Breneman R. Bruce
Fleck Linda J.
Fujitsu Limited
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