Method for growing antimony-doped silicon single crystal

Details Method for growing antimony-doped silicon single crystal Method for growing antimony-doped silicon single crystal

1990-11-14

1995-06-13

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117928, C30B 1504

Patent

active

054232830

ABSTRACT:
A method for growing an antimony-doped silicon single crystal having an oxygen concentration of 12 ppma or more is employed wherein the pressure of an atmospheric inert gas within the furnace is set at a range between 10 and 50 millibars (1000-5000 Pa), and also the reference rate of rotation of the quartz crucible is set at 5 rpm or more while pulling an antimony-doped silicon single crystal having an antimony concentration of 6.times.10.sup.18 atom/cc or more from an antimony-doped silicon melt contained in a quartz crucible according to the Czochralski process. The reference rate of rotation can be increased in accordance with the increasing length of the pulled single crystal, and further a pulse-like change in rotation rate can be superimposed over the reference rate of rotation, so that the pulled single crystal can have a high and axially and radially uniform oxygen concentration throughout the entire length of the single crystal.

REFERENCES:
patent: 3501406 (1970-03-01), Kappelmeyer
patent: 4040895 (1977-08-01), Patrick et al.
patent: 4239585 (1980-12-01), Kohl
patent: 4417943 (1983-11-01), Jacques et al.
patent: 4537652 (1985-08-01), Kawasaki et al.
patent: 4659421 (1987-04-01), Jewett
patent: 4973377 (1990-11-01), Katsuoka et al.
Journal of Crystal Growth, vol. 49, No. 2, Jun., 1980, pp. 291-296, Amsterdam, NL; P. Scheel et al.: "Crystal pulling using ACRT".

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