Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1984-07-02
1986-04-22
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
H01L 21473, H01L 21427
Patent
active
045842051
ABSTRACT:
In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation process at a temperature of less than about 1000.degree. C. The semiconductor device is then annealed in a nonoxidizing ambient at a temperature above about 1000.degree. C., and finally a second oxide layer portion is then grown over the first oxide layer portion in a second thermal oxidation process to complete the growth of the oxide layer. The silicon surface may be of either polycrystalline or monocrystalline material. This method avoids both the dopant outdiffusion problems associated with present high-temperature oxidation processes and the stress-related irregularities associated with known low-temperature oxidation processes.
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patent: 4344985 (1982-08-01), Goodman
patent: 4377605 (1983-03-01), Yamamoto
Marcus et al, "Polysilicon/SiO.sub.2 Interface Microtexture and Dielectric Breakdown", J. Electrochem. Soc.: Solid State Science and Technology, vol. 129, No. 6, pp. 1282-1289, Jun., 1982.
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Irene, "Method to Reduce Defects in Very Thin SiO.sub.2 Films", IBM TDB, vol. 21, No. 1, Jun. 1978, pp. 393, 394.
Bhattacharyya Anjan
Chen Teh-yi J.
Schmitz Albert
Stacy William T.
Vorst Charles J.
Biren Steven R.
Mayer Robert T.
Signetics Corporation
Smith John D.
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