Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-09-01
2000-07-11
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 32, 117217, 117917, C30B 1520
Patent
active
060866713
ABSTRACT:
A method for melting a silicon starting material can suppress silica (SiO2) from melting out from a quartz crucible wherein the silicon starting material is melted and can provide a high-quality silicon single crystal in a high yield. The growth method comprises melting the silicon starting material charged in the crucible while applying thereto a static magnetic field, contacting a seed crystal to a surface of the silicon melt, and pulling the seed crystal upwardly to solidify the contacted melt. The silicon starting material charged in the crucible, which is under melting, is applied with a static magnetic field such as a Cusp magnetic field, a horizontal magnetic field and/or a vertical magnetic field. The application can control heat convection occurring in the crucible during the course of the melting of the starting material, thereby obtaining a silicon single crystal having a reduced number of dislocation defects.
REFERENCES:
patent: 5196085 (1993-03-01), Szekley et al.
patent: 5792255 (1998-08-01), Iino et al.
patent: 5797990 (1998-08-01), Li
patent: 5851283 (1998-12-01), Hoshi et al.
patent: 5868832 (1999-02-01), Begg
Kawanishi Souroku
Yamamoto Youichi
Garrett Felisa
Sumitomo Sitix Corporation
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