Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-05-28
1999-01-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 31, 117213, 117217, C30B 1500
Patent
active
058580859
ABSTRACT:
A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
REFERENCES:
patent: 4352784 (1982-10-01), Lin
patent: 5009863 (1991-04-01), Shima et al.
patent: 5196173 (1993-03-01), Arai et al.
patent: 5361721 (1994-11-01), Takano et al.
Abe Keisei
Arai Yoshiaki
Machida Norihisa
Garrett Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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