Method for growing a liquid phase epitaxial layer on a semicondu

Details Method for growing a liquid phase epitaxial layer on a semicondu Method for growing a liquid phase epitaxial layer on a semicondu

1980-06-05

1981-11-03

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 29569L, 29576E, H01L 21208

Patent

active

042984106

ABSTRACT:
A method for selectively growing a liquid phase epitaxial layer on a semiconductor substrate comprises a first step of supplying a liquid phase epitaxial solution in a chamber of an upper body and supplying a semiconductor substrate on which is selectively coated an insulating layer in a recess in an under body, the upper surface of which constituting the bottom of said chamber; a second step of heating said semiconductor substrate and said solution to a predetermined temperature and sliding said upper body and said under body relative to each other so as to position said chamber above said recess, thereby effecting contact between said solution and said semiconductor substrate; a third step of effecting said sliding again so as to separate said recess and said chamber so that said solution remains on the regions of said semiconductor substrate surface on which said insulating layer is not coated; and a fourth step of cooling said solution and said semiconductor substrate at a constant cooling rate so as to grow a liquid phase epitaxial layer.

REFERENCES:
patent: Re28140 (1974-08-01), Bergh et al.
patent: 3535772 (1970-10-01), Knight et al.
patent: 3549401 (1970-12-01), Buzko et al.
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3697336 (1972-10-01), Lamorte
patent: 3715245 (1973-02-01), Barnett et al.
Barnett et al., IEEE Transactions on Electron Devices, vol. ED-18, No. 9, Sep. 1971, pp. 638-641.

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