Method for growing a HgCdTe epitaxial layer on a semiconductor s

Details Method for growing a HgCdTe epitaxial layer on a semiconductor s Method for growing a HgCdTe epitaxial layer on a semiconductor s

1993-01-22

1995-03-21

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 3, 437 5, 437 81, 437 84, 437102, 437126, 437133, 437965, 148DIG64, H01L 3118

Patent

active

053995031

ABSTRACT:
A method for growing an epitaxial layer of a group II-VI tenary or quaternary compound on a substrate. In particular a HgCdTe semiconductor layer is grown on a substrate such as sapphire which does not interdiffuse with the materials in the semiconductor layer. Initially a crystalline CdTe semiconductor layer is formed on the substrate and then the substrate with the CdTe layer thereon is placed into an enclosure along with a Hg-Cd-Te source that is rich in Te. The substrate and the source are then heated so as to establish three-phase equilibrium conditions in the enclosure whereby vapors from the source are transported to the CdTe layer and the latter is converted into a ternary semiconductor compound having the composition Hg.sub.1-x Cd.sub.x Te. The substrate with the Hg.sub.1-x Cd.sub.x Te epitaxial layer thereon is useful as a sensing device.

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