Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1998-03-11
1999-12-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117101, 117929, 423446, 427577, C30B 2502
Patent
active
060011742
ABSTRACT:
A method to grow diamond crystal by an utilization of liquid template on which carbon precursor is deposited. The liquid template is to replace the conventional solid template to improve the quality and the size of the diamond crystal through the inherent property of the liquid. Its ideal smoothness, its amorphosity and therefore, an absence of the grain boundary, and its high surface mobility for carbon aggregation to form diamond crystal, thus to grow diamond crystal.
REFERENCES:
patent: 4690714 (1987-09-01), Li
patent: 5082359 (1992-01-01), Kirkpatrick et al.
patent: 5363798 (1994-11-01), Yoder
patent: 5771845 (1998-06-01), Pisten
Birch Richard J.
Birch Richard J.
Kunemund Robert
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