Method for growing a compound semiconductor and a method for pro

Details Method for growing a compound semiconductor and a method for pro Method for growing a compound semiconductor and a method for pro

1993-07-23

1996-02-13

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437129, 437133, 437946, 117106, H01L 2120, H01L 21302

Patent

active

054911060

ABSTRACT:
A method for growing a compound semiconductor layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) on a compound semiconductor substrate uses a molecular beam epitaxial apparatus, the method including the steps of providing the substrate having a GaAs layer on an upper surface thereof, thermally etching the GaAs layer by heating the substrate at a temperature and irradiating the GaAs layer with a gallium molecular beam and an arsenic molecular beam to expose the upper surface of the substrate, and growing the Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) layer on the upper surface of the substrate.

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