Method for gettering heavy metal from a silicon plate

Details Method for gettering heavy metal from a silicon plate Method for gettering heavy metal from a silicon plate

1986-05-20

1987-09-08

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4273762, B05D 306

Patent

active

046923454

ABSTRACT:
In the particular embodiments of the invention disclosed in the specification, a single crystal silicon plate having heavy metal impurities is coated with a layer of amorphous silicon several hundred to several thousand Angstroms thick in a vacuum vessel by a glow discharge at a pressure of 1 to 10 Torr and a temperature of about 200.degree. C. Silane gas is used to form a non-doped layer and about 1% of diborane or phosphine gas may be added to form a p-type or an n-type layer, respectively. The glow discharge is produced by a high frequency voltage applied to electrodes in the vacuum vessel but a direct current discharge may be used initially to provide improved adhesion of the layer. When the plate is heated above the crystallization temperature of the a-Si layer, heavy metal impurities are gettered from the single crystal.

REFERENCES:
patent: 3021198 (1962-02-01), Rummel
patent: 4053335 (1977-10-01), Hu
patent: 4249962 (1981-02-01), Celler
patent: 4474625 (1984-10-01), Cohen et al.

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