Method for generating luminescence from a buried layer in a mult

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

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438 46, 438103, H01L 2100

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active

060636424

ABSTRACT:
A method is disclosed for generating light in one or more buried layers of a multilayer compound semiconductor material by contacting the material with a tansparent, electrically conducting fluid and passing current between the fluid and the semiconductor material. The measured characteristics of the light emitted from a first semiconductor material may be compared with those measured from a second semiconductor material of known properties, and the properties of the first semiconductor material calculated. Uniformity maps of the compound semiconductor material may be prepared using the patterns of various light emission characteristics measured across the surface of the material.

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