Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2007-04-17
2007-04-17
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
C430S296000, C430S942000, C250S492200, C250S492220, C250S492300, C716S030000
Reexamination Certificate
active
10853760
ABSTRACT:
A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nthlayer from the resist layer among the plural layers, there is provided, for each of the substances in the nthlayer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nthlayer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nthlayer; and a scatter distribution in which the charged particles are scattered within the nthlayer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.
REFERENCES:
patent: 6243487 (2001-06-01), Nakajima
patent: 6544700 (2003-04-01), Ogino
patent: 6831283 (2004-12-01), Yoda et al.
patent: 6835942 (2004-12-01), Magoshi et al.
patent: 6845497 (2005-01-01), Murai et al.
patent: 7-078737 (1995-03-01), None
patent: 10-275762 (1998-10-01), None
patent: 2001-052999 (2001-02-01), None
patent: 2002-313693 (2002-10-01), None
Magoshi, Shunko, et al., “Proximity effect correction on the multi-level interconnect metal for the high-energy electron-beam lithography”,Emerging Lithographic Technologies VII, Roxann L. Engelstd. Editor, Proceedings of SPIE, vol. 5037 (2003).
Murai, Fumio, et al., “Fast proximity effect correction method using a pattern area density map”,J. Vac. Sci. Technol. B, vol. 10, No. 6, pp. 3072-3076.
“Data Processing System for Block Exposure: BEXELWIN”, FUJITSU.50.6, pp. 405-410.
Ogino, Kozo, et al., “3D Proximity Effect Correction for Multi-Layer Structures in EB Lithography”, Digest of Papers 2003,International Microprocessors and Nanotechnology Conference.
Ogino Kozo
Osawa Morimi
Fujitsu Limited
Staas & Halsey , LLP
Young Christopher G.
LandOfFree
Method for generating backscattering intensity on the basis... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for generating backscattering intensity on the basis..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for generating backscattering intensity on the basis... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3733511