Method for generating a signal representative of the current...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure

Reexamination Certificate

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Details

C257S578000, C257S579000, C438S328000, C438S329000, C438S330000, C327S202000

Reexamination Certificate

active

07911032

ABSTRACT:
An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track.

REFERENCES:
patent: 5939768 (1999-08-01), Palara
patent: 5973367 (1999-10-01), Williams

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