Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2011-03-22
2011-03-22
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S578000, C257S579000, C438S328000, C438S329000, C438S330000, C327S202000
Reexamination Certificate
active
07911032
ABSTRACT:
An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track.
REFERENCES:
patent: 5939768 (1999-08-01), Palara
patent: 5973367 (1999-10-01), Williams
Patti Davide
Sciacca Vincenzo
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Nguyen Thinh T
STMicroelectronics S.r.l.
LandOfFree
Method for generating a signal representative of the current... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for generating a signal representative of the current..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for generating a signal representative of the current... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2757600