Method for generating a lattice structure with a phase shift on

Radiation imagery chemistry: process – composition – or product th – Holographic process – composition – or product

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430279, 430320, 430323, 430394, 430395, 350 368, G03H 128

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048595489

ABSTRACT:
A method for generating a lattice structure with a phase shift on a surface of a substrate characterized by the steps of exposing of a photo-sensitive surface in an optical interference field and then subsequently exposing the same surface to a second interference field with the spatial frequencies of the two interference fields being changed a small amount between the two exposures. The photo-sensitive surface can be a photoresist layer applied on the substrate. After developing of the layer, this lattice structure is produced by etching. Another embodiment of the method is produced by means of a laser-active etching wherein the photo-sensitive surface is compound of a substrate surface in contact with an etchant and the etchant reaction is activated by the exposure.

REFERENCES:
patent: 4402571 (1983-09-01), Cowan et al.
"Antisymmetric Taper of Distributed Feedback Lasers", Hermann A. Haus et al., IEEE Journal of Quantum Electronics, vol. QE-12, No. 9, Sep. 1976, pp. 532-539.
"1.5 .mu.m Phase-Shifted DFB Lasers for Single-Mode Operation", K. Sekartedjo et al., Electronics Letters, Jan. 19, 1984, vol. 20, No. 2, pp. 80-1.
".eta./4-Shifted InGaAsP/InP DFB Lasers by Simultaneous Holographic Exposure of Positive and Negative Photoresists", K. Utaka et al., Electronics Letters, Nov. 22, 1984, vol. 20, No. 24, pp. 1008-1010.
"Coupled-Wave Theory of Distributed Feedback Lasers", H. Kogelnik and C. V. Shank, J. Appl. Phys., vol. 43, No. 5, May 1972, pp. 2327-2335.
"Effect of Mirror Facets on Lasing Characteristics of Distributed Feedback InGaAsP/InP Laser Diodes at 1.5 m Range", K. Utaka et al., IEEE Journal of Quantum Electronics, vol. QE-20, No. 3, Mar. 1984, pp. 236-245.
"Improvements in the Modulation Amplitude of Submicron Gratings Produced in n-InP by Direct Photoelectrochemical Etching" Lum et al., Appl. Phys. Lett., vol. 47, No. 3, Aug. 1, 1985, pp. 269-271.

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