Method for gas-assisted, solid-to-solid thermal transfer with a

Details Method for gas-assisted, solid-to-solid thermal transfer with a Method for gas-assisted, solid-to-solid thermal transfer with a

1984-03-02

1985-04-02

Richter, Sheldon J.

Heat exchange

Regenerator

Checker brick structure

51235, 51324, 118724, 118728, 165 80C, 165185, 269 26, F28F 1300

Patent

active

045081611

ABSTRACT:
Apparatus and method are provided for effecting gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer. A semiconductor wafer is loaded at its periphery onto a shaped platen. Sufficient contact pressure from the loading is produced between the wafer and the platen so that significant gas pressure may be accommodated against the back side of the wafer without having the wafer bow outwardly or break. Gas under pressure is introduced into the microscopic void region between the platen and the wafer. The gas fills the microscopic voids between the platen and semiconductor wafer. The gas pressure approaches that of the preloading contact pressure without any appreciable increase in the wafer-to-platen spacing. Since the gas pressure is significantly increased without any increase in the wafer-to-platen gap, the thermal resistance is reduced and solid-to-solid thermal transfer with gas assistance produces optimum results.

REFERENCES:
patent: 3062507 (1962-11-01), Andrus
patent: 3190262 (1965-06-01), Bakish et al.
patent: 3566960 (1969-08-01), Stuart
patent: 4139051 (1979-02-01), Jones et al.
patent: 4261762 (1981-04-01), King
patent: 4282924 (1981-08-01), Faretra
King et al., "Experiments on Gas Cooling of Wafers," Nucl. Instrum. Methods, 189 (1981), pp. 169-173.
Hammer, "Cooling Ion Implantation Target," IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976, pp. 2270-2271.

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