Method for fracturing a pattern for writing with a shaped...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S030000, C430S296000, C430S396000, C430S397000, C430S942000, C716S053000, C716S055000

Reexamination Certificate

active

07985514

ABSTRACT:
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed.

REFERENCES:
patent: 5082762 (1992-01-01), Takahashi
patent: 5173582 (1992-12-01), Sakamoto et al.
patent: 6037601 (2000-03-01), Okunuki
patent: 7176470 (2007-02-01), Evans et al.
patent: 2002/0042009 (2002-04-01), Suzuki
patent: 2003/0059716 (2003-03-01), Simizu
patent: 2003/0077530 (2003-04-01), Fujiwara et al.
patent: 2004/0011966 (2004-01-01), Sasaki et al.
patent: 2005/0091632 (2005-04-01), Pierrat et al.
patent: 1429368 (2004-06-01), None
patent: 03205815 (1991-09-01), None
patent: 2000091191 (2000-03-01), None
patent: 03036386 (2003-05-01), None
patent: 03036386 (2003-05-01), None
patent: 2010025031 (2010-03-01), None
patent: 2010025061 (2010-03-01), None
International Search Report and Written Opinion dated Dec. 3, 2010 for PCT/US2010/046559.
International Search Report and Written Opinion dated Dec. 29, 2010 for application PCT/us2010/051534.
U.S. Appl. No. 12/540,328, filed Aug. 12, 2009, titled “Method For Design and Manufacture of a Reticle Using a Two-Dimensional Dosage Map and Charged Particle Beam Lithography”, Fujimura et al.
U.S. Appl. No. 61/237,290, filed Aug. 26, 2009, titled “Method and System For Manufacturing a Surface Using Charged Particle Beam Lithography”, Hagiwara et al.
U.S. Appl. No. 12/540,321, filed Aug. 12, 2009, titled “Method For Fracturing Circular Patterns and For Manufacturing a Semiconductor Device”, Fujimura et al.
U.S. Appl. No. 12/202,366, filed Sep. 1, 2008, titled “Method and System For Design of a Reticle To Be Manufactured Using Character Projection Lithography”, Fujimura et al.
Hara, S. et al., “Character Projection EB Data Conversion System Combined with Throughput Analyzer”, Japanese Journal of Applied Physics, vol. 33 (1994), pp. 6935-6939, Japan Society of Applied Physics, Kudan-Kita building 5th floor, Kudan-Kita 1-12-3, Chiyoda-ku, Tokyo 102-0073, Japan.
Hattori, K. et al., “Electron Beam Direct Writing System EX-8D Employing Character Projection Exposure Method”, Journal of Vacuum Science Technology, vol. B11(6) (1993), pp. 2346-2351, 1993, American Vacuum Society, 125 Maiden Lane, 15th Floor, New York, NY 10038.
Yamada, A. et al., “Variable cell projection as an advance in electron-beam cell projection system”, Journal of Vacuum Science Technology, B 22(6) (2004), pp. 2917-2922, American Vacuum Society, 125 Maiden Lane, 15th Floor, New York, NY 10038.
Extended European Search report dated Apr. 28, 2011 for EPO Application No. 10173794.8.
International Search Report and Written Opinion dated May 30, 2011 for International Application No. PCT/US2010/051393.
Nishimura, S. et al., “Development of a mask-scan electron beam mask writer”, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures). vol. 20, No. 6, Nov. 1, 2002, pp. 2640-2645 XP002632946.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fracturing a pattern for writing with a shaped... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fracturing a pattern for writing with a shaped..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fracturing a pattern for writing with a shaped... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2714497

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.