Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including diode
Patent
1995-12-29
1998-05-26
Graybill, David
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including diode
438369, 438358, 438376, 438912, 438983, 257469, 257551, H01L 218222
Patent
active
057563870
ABSTRACT:
Zener diode with high stability in time and low noise for integrated circuits and provided in an epitaxial pocket insulated from the rest of a type N epitaxial layer grown on a substrate of type P semiconductor material.
In said pocket are included a type N+ cathode region and a type P anode region enclosing it.
The cathode region has a peripheral part surrounding a central part extending in the anode region less deeply than the peripheral part.
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Terry, L.; Pirastehfar, H.; Rutter, R., "Passivation induced voltage breakdown shifting in surface zener structures." 1990 ISTFA Proceedings: 241-244.
Dunkley, J.; Ganschow, G.; Hannaman, D.; Patterson, J.; Willard, S.; Gopi, P., "Hot electron induced hydrogen compensation of boron doped silicon resulting from emitter-base breakdown," 1992 IEDM Technical Digest: 785-788.
Ferrari Paolo
Villa Flavio
Carlson David V.
Graybill David
Pham Long
SGS--Thomson Microelectronics S.r.l.
Stewart John C.
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