Method for forming wiring structure

Details Method for forming wiring structure Method for forming wiring structure

2005-02-22

2005-02-22

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Cleaning of wafer as interim step

C438S618000, C438S622000, C438S625000, C438S626000, C438S627000, C438S631000, C438S633000, C438S636000, C438S648000

Reexamination Certificate

active

06858549

ABSTRACT:
After a plurality of grooves are formed in an insulating film and in an antireflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled. Subsequently, the portions of the conductive film outside the grooves are removed by a first polishing step and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, foreign matter adhered to the surface of the anti-reflection film is removed and a third polishing step is conducted on the surface of the anti-reflection film using an abrasive agent of the same type as used in the first polishing step of the conductive film.

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