Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-07
1998-06-30
Martin, Roland
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438736, 438742, B44C 122
Patent
active
057733660
ABSTRACT:
A method for forming a tungsten wiring, wherein an etch barrier layer is formed on an area where a metal wiring will be formed, using chlorine-based plasma so that the etch barrier layer is used as a mask upon forming a metal wiring, thereby eliminating a limitation on the thickness of the tungsten junction layer. the method includes the steps of sequentially forming a tungsten junction layer and a tungsten film over a semiconductor substrate, forming a negative type photoresist film pattern using a metal wiring mask, forming a copper thin film on a selectively exposed portion of the tungsten film, growing the copper thin film in a chlorine-based plasma atmosphere, thereby forming a copper chloride thin film, removing the photoresist film pattern, sequentially etching the tungsten film and tungsten junction layer using the copper chloride thin film as a mask, and removing the copper chloride thin film, thereby forming a tungsten wiring. The method provides a sufficient process margin, thereby achieving an improvement in the reliability of semiconductor devices and a high integration of semiconductor devices.
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Hyundai Electronics Industries Co,. Ltd.
Martin Roland
Nath Gary M.
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