Method for forming well of semiconductor device

Details Method for forming well of semiconductor device Method for forming well of semiconductor device

1996-12-27

1998-01-06

Dang, Trung

Fishing, trapping, and vermin destroying

437 52, 437152, 437 26, 437 28, H01L 2176

Patent

active

057054223

ABSTRACT:
A method for forming a well of a semiconductor device sequentially forms a buffer film, an oxidizable film, and an oxidation-blocking film on a periphery area of a semiconductor substrate. A predetermined part of the oxidation-blocking film is etched to partially expose a surface of the oxidizable film and a thermal oxidation is performed to form a field oxide film on a region of the periphery area where the oxidizable film is exposed and on a cell area where the substrate is exposed. The oxidation-blocking film, the oxidizable film, and the buffer film are removed. Impurity ions of a first conductivity type are implanted using high energy. Impurity ions of a second conductivity type are implanted using low energy by using the field oxide film as a mask. The field oxide film is removed and a diffusion is performed to form wells of the first and second conductivity types.

REFERENCES:
patent: 4931406 (1990-06-01), Tomioka
patent: 5292671 (1994-03-01), Odanaka
patent: 5397734 (1995-03-01), Iguchi et al.
patent: 5451530 (1995-09-01), Bell et al.

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