Method for forming voltage-invariant capacitors for MOS type int

Details Method for forming voltage-invariant capacitors for MOS type int Method for forming voltage-invariant capacitors for MOS type int

1979-07-06

1981-04-14

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576C, 29571, 29577R, 29578, 148 15, 148187, 156653, 156657, 156662, 357 45, 357 51, 357 54, 357 59, 357 23, 427 86, 427 93, H01L 21283, H01L 21306

Patent

active

042617723

ABSTRACT:
For an integrated circuit semiconductor device having a multiplicity of MOSFET elements, voltage-invariant capacitors, each with metal as one plate and either polysilicon or source-drain diffusion as the second plate, are created by regrowing a thin oxide layer to provide the dielectric of the capacitor during the normal MOSFET processing sequence.

REFERENCES:
patent: 3860836 (1975-01-01), Pedersen
patent: 3893146 (1975-07-01), Heeren
patent: 3986903 (1976-10-01), Watrous
patent: 4035820 (1977-07-01), Matzen
patent: 4055444 (1977-10-01), Rao
patent: 4102733 (1978-07-01), DeLaMoneda
patent: 4110776 (1978-08-01), Rao et al.
patent: 4125933 (1978-11-01), Baldwin et al.
patent: 4191603 (1980-03-01), Garbarino et al.
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4214917 (1980-07-01), Clark et al.

Affiliated with

Also associated with

Rating

Method for forming voltage-invariant capacitors for MOS type int does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming voltage-invariant capacitors for MOS type int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming voltage-invariant capacitors for MOS type int will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-157213