Method for forming virtual-ground flash EPROM array with reduced

Details Method for forming virtual-ground flash EPROM array with reduced Method for forming virtual-ground flash EPROM array with reduced

1994-08-19

1997-02-18

Niebling, John

Fishing, trapping, and vermin destroying

437 52, 437191, H01L 218247

Patent

active

056041411

ABSTRACT:
In a virtual-ground flash electrically programmable read-only-memory (EPROM), the pitch in the X direction of the floating gates, which are formed over a portion of vertically-adjacent field oxide regions, is reduced by forming the floating gates over continuous strips of vertically-adjacent field oxide. The strips of field oxide are formed in a layer of polysilicon which is formed over a layer of tunnel oxide which, in turn, is formed over the substrate.

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