Method for forming via contact hole in a semiconductor device

Details Method for forming via contact hole in a semiconductor device Method for forming via contact hole in a semiconductor device

1997-10-03

1999-07-20

Booth, Richard A.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438704, 438963, 438637, 438639, 438669, 438720, 134 11, 134 12, 134 13, 216 17, H01L 21302

Patent

active

059255773

ABSTRACT:
A method of plasma etching photoresist and sidewall polymer with an etch gas mixture comprising a fluorine containing gas (CF.sub.4 or NF.sub.3) and H.sub.2 O demonstrating very aggressive ashrate of photoresist but maintains an exceptionally low etch rate for titanium nitride and other metals is provided. The very low TiN etch rate permits the inventive method to effectively breakdown sidewall polymer without removing any significant amount of these metals. The invention is particularly suited for stripping sidewall polymer from etched via holes and from etched metal lines. Vias fabricated with this technique exhibit exceptionally low resistance.

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