Method for forming variable width isolation structures

Details Method for forming variable width isolation structures Method for forming variable width isolation structures

1991-03-12

1993-08-10

Fourson, George

Fishing, trapping, and vermin destroying

437 89, 437 90, H01L 2176

Patent

active

052348610

ABSTRACT:
An isolation structure as well as a method for using and fabricating an isolation structure in an active layer deposited on a substrate the method of fabrication including the steps of forming a buried oxide layer in the active layer adjacent the substrate, forming an isolation trench in the active layer by etching at least up to and optionally into the substrate, forming a dielectric isolation layer on the exposed surfaces of the trench, removing the dielectric isolation layer from the bottom of the trench, and forming an isolation structure by epitaxially growing monocrystalline silicon in the trench.

REFERENCES:
patent: 3717514 (1973-02-01), Burgess
patent: 4400411 (1983-08-01), Yuan et al.
patent: 4412868 (1983-11-01), Brown
patent: 4454646 (1984-06-01), Joy et al.
patent: 4470062 (1984-09-01), Muramatsu
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4487639 (1984-12-01), Lam et al.
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4547793 (1985-10-01), Bergeron
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4556585 (1985-12-01), Abernathy et al.
patent: 4575925 (1986-03-01), Kanbara et al.
patent: 4578143 (1986-03-01), Arai
patent: 4592792 (1986-06-01), Corboy et al.
patent: 4636281 (1987-01-01), Buiguez et al.
patent: 4663831 (1987-05-01), Birrittella
patent: 4680614 (1987-07-01), Beyer et al.
patent: 4688069 (1987-08-01), Joy et al.
patent: 4689656 (1987-08-01), Silvestri
patent: 4908328 (1990-03-01), Hu et al.
patent: 5049521 (1991-09-01), Belanger et al.
Harame et al, Electrical Characteristics of Diodes Fabricated in Selective-Epitaxial Silicon Wells, Nov., 1986; from Solid-State Electronics, vol. 30, No. 9, pp. 907-912.

Affiliated with

Also associated with

Rating

Method for forming variable width isolation structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming variable width isolation structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming variable width isolation structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724907