Method for forming variable width isolation structures

Details Method for forming variable width isolation structures Method for forming variable width isolation structures

1989-06-30

1991-05-21

Jackson, Jr., Jerome

357 55, 357 71, 357 47, H01L 2712, H01L 2906, H01L 2702

Patent

active

050179993

ABSTRACT:
An isolation structure as well as a method for using and fabricating an isolation structure in an active layer deposited on a substrate the method of fabrication including the steps of forming a buried oxide layer in the active layer adjacent the substrate, forming an isolation trench in the active layer by etching at least up to and optionally into the substrate, forming a dielectric isolation layer on the exposed surfaces of the trench, removing the dielectric isolation layer from the bottom of the trench, and forming an isolation structure by epitaxially growing monocrystalline silicon in the trench.

REFERENCES:
patent: 3717514 (1973-02-01), Burgess
patent: 4139401 (1979-02-01), McWilliams et al.
patent: 4400411 (1983-08-01), Yuan et al.
patent: 4412868 (1983-11-01), Brown
patent: 4454646 (1984-06-01), Joy et al.
patent: 4470062 (1984-09-01), Muramatsu
patent: 4473598 (1984-09-01), Ephrath et al.
patent: 4487639 (1984-12-01), Lam et al.
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4547793 (1985-10-01), Bergeron
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4575925 (1986-03-01), Kanbara et al.
patent: 4578143 (1986-03-01), Arai
patent: 4592792 (1986-06-01), Corboy et al.
patent: 4636281 (1987-01-01), Buiguez et al.
patent: 4680614 (1987-07-01), Beyer et al.
patent: 4688069 (1987-08-01), Joy et al.
patent: 4689656 (1987-08-01), Silvestri
patent: 4791073 (1988-12-01), Nagy et al.
patent: 4819052 (1989-04-01), Hutter
patent: 4908328 (1990-03-01), Hu et al.
Harame et al., Electrical Characteristics of Diodes Fabricated in Selective-Epitaxial Silicon Wells, Nov., 1986; from Solid-State Electronics, vol. 30, No. 9, pp. 907-912.

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