Method for forming uniformly thick selective epitaxial silicon

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29576E, 29578, 148DIG25, 148DIG26, 148DIG50, 156612, 156613, 156657, 156662, H01L 21205, H01L 2176

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active

045927928

ABSTRACT:
Monocrystalline silicon is deposited on first and second portions of a substrate, the first and second portions having substantially unequal dimensions. The method comprises subjecting the substrate to a silicon-source gas and a predetermined concentration of chloride at a predetermined temperature. The chloride concentration is selected so as to create a substantially equally thick monocrystalline silicon deposit on each of the substrate portions.

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