Method for forming tungsten oxide films

Coating processes – Electrical product produced – Metallic compound coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427106, 427108, 4271261, 427165, 427226, 427380, B05D 512, B05D 302

Patent

active

050342460

ABSTRACT:
A method is disclosed for forming a tungsten oxide film on a substrate by applying an alkyl amine tungstate compound thereon and removing at least a portion of the alkyl amine tungstate compound to form a tungsten oxide film.
In a preferred embodiment, a solution of alkyl amine tungstate compound is formed in a solvent to uniformly apply the alkyl amine tungstate compound; the solvent is removed by evaporation thereby forming a deposit; the deposit is heated for a time and at a temperature sufficient to at least partially pyrolyze the alkyl amine tungstate compound.
The alkyl amine tungstate compound desirably may be selected from the group consisting of bis (di-n-octylammonium) tetratungstate, and di (n-octadecylammonium) tetratungstate. Preferably, bis (di-n-octylammonium) tetratungstate is used.
The invention also provides tungsten oxide films which include suboxides of tungsten oxides (WO.sub.3); which have an average ratio of oxygen atoms to tungsten atoms equal to or less than 3:1; which are denser than films produced from currently known MOD precursor compounds; which have a color gradient, that is, regions of different color; and wherein the regions of color are electrochromic.

REFERENCES:
patent: 3617341 (1971-11-01), Fetterman
patent: 4347265 (1982-08-01), Washo
patent: 4960618 (1990-10-01), Tanitso et al.
Engelken et al, "Growth of Tungsten Selenide Films . . . ((NH.sub.4).sub.2 WSe.sub.4)", Mat. Res. Bull., vol. 20 (1985), pp. 1173-1179.
Yamanaka et al, "The Electrochromic Properties of . . . Organic Tungsten Compound", Jap J. Appl Phys, vol. 20 (4) (1981), pp. 307-308.
Unuma et al, "Preparation of Transparent Amorphous Tungsten Trioxide . . . Dip Coating Method", Jour. Mat. Sci. Letters 5 (1986), pp. 1248-1250.
Boyer et al, "New Preparation of . . . W.sub.6 O.sub.19 ", C.R. Acad. Sci. Paris, 281 (Series C, 1975), pp. 59-62 (English Translation of the Original French version).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming tungsten oxide films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming tungsten oxide films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming tungsten oxide films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-431650

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.