Method for forming trench isolation structures

Details Method for forming trench isolation structures Method for forming trench isolation structures

1985-05-20

1986-03-18

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427240, 427259, 156652, 156653, 29576W, H01L 21316

Patent

active

045768340

ABSTRACT:
A streamlined process for forming a fully recessed, self-planarized dielectric isolation structure involves selectively depositing organosilicon material such as orthosilicate esters or siloxane resins in substrate trenches without build-up on adjacent substrate steps, which steps are coated with a non-wetting polymer material such as fluorocarbon compounds, then converting the organosilicon material to silicon oxide by heating at about 200.degree. C.-900.degree. C.

REFERENCES:
patent: 4222792 (1980-09-01), Lever
patent: 4305974 (1981-12-01), Abe
patent: 4377619 (1983-03-01), Schonhorn

Affiliated with

Also associated with

Rating

Method for forming trench isolation structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming trench isolation structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming trench isolation structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2305449