Method for forming trench capacitors in an integrated circuit

Details Method for forming trench capacitors in an integrated circuit Method for forming trench capacitors in an integrated circuit

1998-02-27

1999-12-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438246, 438389, H01L 2120

Patent

active

060081031

ABSTRACT:
A method for forming a trench capacitor in a substrate, including a buried plate of the trench capacitor, is disclosed. The method includes forming a trench within the substrate. The trench has a trench interior surface. The method further includes forming an oxide collar within the trench. The oxide collar covers a first portion of the trench interior surface, leaving a second portion of the trench interior surface uncovered with the oxide collar. There is also included doping the second portion of the trench interior surface with a first dopant using a plasma-enhanced doping process. The plasma-enhanced doping process being configured to cause the first dopant to diffuse into the second portion substantially without depositing an additional layer on the trench interior surface. Additionally, there is included driving the first dopant into the substrate using a high temperature process to form the buried plate.

REFERENCES:
patent: 4861729 (1989-08-01), Fuse et al.

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