Method for forming thin films by absorption

Details Method for forming thin films by absorption Method for forming thin films by absorption

1984-08-22

1986-08-12

Page, Thurman K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 84, 427 85, 427 91, 427 99, 4272551, 4272552, 427255, B05D 306

Patent

active

046055665

ABSTRACT:
A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Al(CH.sub.3).sub.3, WCl.sub.6 etc.

REFERENCES:
patent: 3205087 (1965-09-01), Allen
patent: 3294583 (1966-12-01), Fedows-Fedotowsky
patent: 3664866 (1972-05-01), Manasevit
patent: 4042006 (1977-08-01), Engl et al.
patent: 4309241 (1982-01-01), Garavaglia et al.
patent: 4436769 (1984-03-01), Moss et al.

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