Method for forming thin films

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

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C428S689000, C428S702000

Reexamination Certificate

active

07041391

ABSTRACT:
The present invention provides a method for forming a film of aluminum oxide in which a target containing aluminum is sputtered in a gas containing fluorine atoms.The thin film of aluminum oxide according to the present invention has little optical absorption and high refractive index in the ultraviolet and vacuum ultraviolet regions.

REFERENCES:
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patent: 4849081 (1989-07-01), Ross
patent: 5135581 (1992-08-01), Tran et al.
patent: 5192610 (1993-03-01), Lorimer et al.
patent: 460700 (1997-04-01), None
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patent: 7-258841 (1995-10-01), None
patent: 7-258845 (1995-10-01), None
patent: 9-217620 (1992-10-01), None
Belkind et al., “Deposition of AIO4FyFilms Using D.C. Reactive Sputtering”, Thin Solid Films, 199, (1991) 279-290.

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