Method for forming thin film transistor

Details Method for forming thin film transistor Method for forming thin film transistor

1992-10-29

1994-07-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437241, 437978, 148DIG90, 148DIG150, H01L 21265

Patent

active

053288610

ABSTRACT:
An amorphous semiconductor layer is deposited on an insulating substrate, and an excimer laser is radiated thereon, and thus the amorphous is crystallized. A silicon oxide layer is deposited on the semiconductor layer, and a silicon nitride layer is deposited on the silicon oxide layer to be thicker than the silicon oxide layer. Thereafter, a gate electrode is formed on the silicon nitride layer. Thus, there is provided a method for a thin film transistor having a good mobility of carriers and a good characteristic of a breakdown voltage in that a gate insulating film is formed of a double-layer structure having the silicon oxide and silicon nitride layers.

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patent: 4232327 (1980-11-01), Hsu
patent: 4264376 (1981-04-01), Yatsuda et al.
patent: 4266985 (1981-05-01), Ito et al.
patent: 4885616 (1989-12-01), Ohta
patent: 4951113 (1990-08-01), Huang et al.
Wolf, "Silicon Processing for the VLSI Era" vol. 2, 1986, pp. 20-22.
Sera et al; "High Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous Silicon Film"; IEEE 1989, Electron Device, pp. 2888-2871.

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