Method for forming thin film of refractory material

Coating processes – Coating by vapor – gas – or smoke – Metal coating

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427 99, 427124, 427255, 4272551, C23C 1608

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active

047465492

ABSTRACT:
In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

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patent: 4357365 (1982-11-01), McCarty
Morosanu et al., "Kinetics and Properties of Chemically Vapor-Deposited Tungsten Films on Silicon Substrates," Thin Solid Films, vol. 52, pp. 181-194, 1978.
Cuomo, "Selective-Chemical Vapor Deposition of Tungsten," Third International Conference of Chemical Vapor Deposition, pp. 270-291, 1972.
Faron et al., "High Performance Emitter for Thermionic Diode Obtained by Chemical Vapor Deposition", pp. 375-381, TS 195.157, 1973.

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