Coating processes – Coating by vapor – gas – or smoke
Patent
1987-01-13
1989-09-19
Morgenstern, Norman
Coating processes
Coating by vapor, gas, or smoke
427255, 4272551, 4272552, 4272553, 4272557, 437225, B05D 306
Patent
active
048680141
ABSTRACT:
A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4568626 (1986-02-01), Ogawa
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4637895 (1987-01-01), Ovshinsky et al.
patent: 4657777 (1987-04-01), Hirooka et al.
patent: 4664937 (1987-05-01), Ovshinsky et al.
Hanna Jun-ichi
Hirooka Masaaki
Kanai Masahiro
Shimizu Isamu
Canon Kabushiki Kaisha
Childs Sadie
Morgenstern Norman
LandOfFree
Method for forming thin film multi-layer structure member does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming thin film multi-layer structure member, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming thin film multi-layer structure member will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-367897