Coating processes – Coating by vapor – gas – or smoke
Patent
1987-01-09
1989-01-31
Childs, Sadie
Coating processes
Coating by vapor, gas, or smoke
427255, 4272551, 4272552, 4272553, 4272557, 437233, 437234, C23C 1600, C23C 1630
Patent
active
048014745
ABSTRACT:
A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
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Hanna Jun-ichi
Hirooka Masaaki
Saitoh Keisha
Shimizu Isamu
Canon Kabushiki Kaisha
Childs Sadie
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