Method for forming thin film capacitors

Details Method for forming thin film capacitors Method for forming thin film capacitors

1997-01-10

1999-06-15

Talbot, Brian K.

Coating processes

Electrical product produced

Condenser or capacitor

427 80, 427125, 427 97, 427534, 427555, 29 2542, 438381, 438387, 438396, 438706, B05D 512

Patent

active

059120444

ABSTRACT:
Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.

REFERENCES:
patent: 5027253 (1991-06-01), Lauffer et al.
patent: 5323520 (1994-06-01), Peters et al.
patent: 5406446 (1995-04-01), Peters et al.
patent: 5406447 (1995-04-01), Miyazaki
patent: 5459635 (1995-10-01), Tomozawa et al.
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5527729 (1996-06-01), Matsumoto et al.
patent: 5653841 (1997-08-01), Krishnamurthy et al.
patent: 5756395 (1998-05-01), Rostoker et al.
"Integrated, Low Inductance, Small Area Capacitors for VLSI Semiconductor Packages," IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul. 1982, pp. 883-888.
"Directly Attached Decoupling Capacitors and Fabrication Process," IBM Technical Disclosure Bulletin, vol. 32, No. 6B, Nov. 1989, pp. 330-331.

Affiliated with

Also associated with

Rating

Method for forming thin film capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming thin film capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming thin film capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-401286