Method for forming thin film and method for fabricating...

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S030000, C438S586000, C438S678000, C438S687000

Reexamination Certificate

active

07011981

ABSTRACT:
A method for forming a thin film and a method for fabricating a liquid crystal display device using the same are provided. The method provides a process that is simplified. Uniform thin film characteristics can be obtained. The method for forming a thin film includes the steps of forming a diffusion barrier film on a substrate, forming a metal seed layer on the diffusion barrier film, removing a metal oxide film formed on a surface of the metal seed layer using an electric plating method, and depositing metal on the metal seed layer in which the metal oxide film is removed.

REFERENCES:
patent: 6008065 (1999-12-01), Lee et al.
patent: 6297441 (2001-10-01), Macris
patent: 6403481 (2002-06-01), Matsuda et al.
patent: 2002/0000382 (2002-01-01), Morrissey et al.
patent: 1 005 078 (2000-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming thin film and method for fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming thin film and method for fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming thin film and method for fabricating... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3540724

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.