Method for forming thin film and film-forming device

Coating apparatus – With means to apply electrical and/or radiant energy to work... – Electrostatic and/or electromagnetic attraction or...

Reexamination Certificate

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Details

C118S634000, C118S052000, C118S612000, C118S319000, C118S320000

Reexamination Certificate

active

07926444

ABSTRACT:
It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.

REFERENCES:
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patent: 6239038 (2001-05-01), Wen
patent: 7247272 (2007-07-01), Moerman et al.
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patent: 2005-13787 (2005-01-01), None
patent: 2005-262127 (2005-09-01), None
Notice of Grounds of Rejection mailed on Dec. 4, 2009 for priority Japanese Patent Application No. 2005-335247 with English translation.

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