Method for forming thin conducting lines by ion implantation and

Details Method for forming thin conducting lines by ion implantation and Method for forming thin conducting lines by ion implantation and

1984-05-22

1986-02-11

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29576B, 29571, 148 15, 148DIG83, 148DIG147, 148DIG19, 148 33, 156628, 357 71, H01L 2128, H01L 21302, H01L 21425

Patent

active

045691240

ABSTRACT:
A thin conducting line such as a gate pattern is defined on a semiconductor chip (10) by applying a narrow ion beam, suitably a focused-ion-beam (16) having a submicrometer thickness from a source (18) onto a thin layer (14) of an inorganic material such as silicon or aluminum overlying a layer (12) of refractory metal on a substrate (11). The ion beam is translated to form a gate pattern at a dose between about 0.1 to 50.times.10.sup.15 cm.sup.-2 and an energy from about 1 to 1000 KeV. Ions are implanted into the silicon and aluminum layers and into the underlying portions of the refractory metal layer and to render the exposed portions of the layers preferentially resistant to wet-etchant. The portions of layers which are not exposed nor protected by layers which are exposed, are preferentially removed to form a gate. Conventional MOSFET or MESFET processing to implant ions to form source and drain regions may then be performed.

REFERENCES:
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patent: 3637383 (1972-01-01), Hallman et al.
patent: 3650743 (1972-03-01), Hallman et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4093503 (1978-06-01), Harris et al.
patent: 4333226 (1982-06-01), Abe et al.
patent: 4418470 (1983-12-01), Naster et al.
patent: 4526624 (1985-07-01), Tombrello et al.
Poate et al., "Laser-Induced Reactions of Platinum & Other Metal Films with Silicon", App. Phys. Lett. 33(1), Dec. 1, 1978, pp. 918-920.

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