Method for forming thin and thick metal layers

Details Method for forming thin and thick metal layers Method for forming thin and thick metal layers

1994-11-28

1996-08-06

Fourson, George

Fishing, trapping, and vermin destroying

437187, 437246, 437984, H01L 2128

Patent

active

055433588

ABSTRACT:
A method for forming a first metal region of a first thickness, and a second metal region of a second thickness on a substrate, wherein the second thickness is greater than the first thickness. The method includes the steps of depositing a first metal layer of a first thickness; depositing a masking layer of a material selectively etchable with respect to the first metal layers; photoetching the masking layer along an outline defining a first metal regions; depositing a second metal layer; forming a resist layer along an outline defining a second metal region; and etching the first and second metal layers.

REFERENCES:
patent: 3775838 (1973-12-01), Polmasso
patent: 4718977 (1988-01-01), Contiero et al.
patent: 5002902 (1991-03-01), Watanabe
patent: 5111276 (1992-05-01), Hingarth et al.
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 30, No. 12, May 1988, New York US, pp. 142-143, "Method For Obtaining Low Resistance and Low Capacitance Metalization Using Single Metal Deposition".
Patent Abstracts of Japan, vol. 11, No. 212 (E-522) Jul. 9, 1987 & JP-A-62033425 (Agency Of IND Science & Technology).

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