Method for forming thick self-supporting masks

Details Method for forming thick self-supporting masks Method for forming thick self-supporting masks

1975-12-29

1978-03-21

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 11, 204 24, C25D 502, C25D 108, C25D 120

Patent

active

040802671

ABSTRACT:
A method of constructing a relatively thick, self-supporting mask suitable for electron beam projection processes. Thickness is achieved by multiple steps of coating with resist, exposure, development and plating. First an intermediate or lift off layer is deposited on a substrate. A plating or a cathode layer may then be deposited. Resist is then applied. A first mask layer comprises metal plated in accordance with the first pattern. For the second exposure a geometrically similar pattern is employed to generate larger apertures. Thus, if the first mask layer has 0.20 mil apertures, the second layer might have corresponding 0.21 mil to 0.22 mil apertures. For initial mask patterns of about 2 mil the second layer might be 2.02 mils. If desired, a third exposure can be employed with a third pattern, similar to the first two, but having larger apertures (by 0.02 to 0.03 mils) than the second pattern.

REFERENCES:
patent: 2598318 (1952-05-01), Teal
patent: 3192136 (1965-06-01), Reid
patent: 3342706 (1967-09-01), Liben et al.
patent: 3402110 (1968-09-01), Scherrer
patent: 3637380 (1972-01-01), Hallman
patent: 3878061 (1975-04-01), Feldstein

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