Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-04-04
2006-04-04
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C438S426000, C257SE21547
Reexamination Certificate
active
07023069
ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The method also includes providing in the semiconductor substrate one or more trenches, first mesas and second mesas. The method also includes oxidizing sidewalls and bottoms of each trench; depositing a doped oxide into each trench and on the tops of the first and second mesas; and thermally oxidizing the semiconductor substrate at a temperature sufficient enough to cause the deposited oxide to flow so that the silicon in each of the first mesas is completely converted to silicon dioxide while the silicon in each of the second mesas is only partially converted to silicon dioxide and so that each of the trenches is filled with oxide.
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Akin Gump Strauss Hauer & Feld & LLP
Third Dimension (3D) Semiconductor, Inc.
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