Method for forming tapered laser or waveguide optoelectronic str

Details Method for forming tapered laser or waveguide optoelectronic str Method for forming tapered laser or waveguide optoelectronic str

1989-03-17

1991-03-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437107, 437138, 437145, 357 17, H01L 2118

Patent

active

049993160

ABSTRACT:
A method and apparatus for forming tapered thickness and material content of III-V material, or alloys thereof, in particular GaAs and AlGaAs, by gradient thermal heating of substrates during epitaxial growth and the optoelectronic structures formed thereby.

REFERENCES:
patent: 3533862 (1970-10-01), Gleim et al.
patent: 3751310 (1973-08-01), Cho
patent: 3996492 (1976-12-01), McGroddy
patent: 4086108 (1978-04-01), Gonda
patent: 4255717 (1981-03-01), Scifres et al.
patent: 4577321 (1986-03-01), Carney et al.
patent: 4633476 (1986-12-01), Seifres et al.
patent: 4637122 (1987-01-01), Carney et al.
patent: 4718070 (1988-01-01), Liau et al.
Tsang and Cho, Appl. Phys. Lett., 30:293 (1977).
Nagata et al., Appl. Phys. Lett., 30:503 (1977).
Smith et al., Appl. Phys. Lett., 47:712 (1985).
Kapon et al., Appl. Phys. Lett., 50:347 (1987).
Ralston et al., J. Vac. Sci. Tech., B4:594 (1986).
Van Hove et al., J. Vac. Sci. Tech., B3:1116 (1985).
Iwata et al., Jpn. J. Appl. Phys., 24:L17 (1985).
Suchoski et al., J. Lightwave Tech., LT-5:1246-1251 (1987).
Mueller and Tyrrell, Bell System Tech. J., 26:837-851 (1947).
Goodhue et al., in Institute of Physics Conference Series 83, W. T. Lindley ed., IOP Publishing Ltd., Bristol, pp. 349-354 (1987).
Welch et al., Appl. Phys. Lett., 49:1632-1234 (1986).
Murakami et al., IEEE J. Quantum Elec., QE-23:712-719 (1987).
Coburn and Winters, J. Vac. Sci. Tech., 16:1613-1614 (1979).
Lechmann and Widmer, J. Vac. Sci. Tech., 15:319-326 (1978).
Marcuse, Bell System Tech. J., Feb.:273-290 (1970).
Kraus, in Antennas, McGraw-Hill Electrical and Electronic Engineering Series, F. E. Terman (ed.), McGraw-Hill, N.Y., pp. 404-407 (1950).
Goodhue, et al., Solid State Research Report, Lincoln Laboratory, MIT, 3:26-31 (Jan. 19, 1988).
"Monolithic Two-Dimensional Surface-Emitting Arrays of GaAs/AlGaAs Diode Lasers", Donnelly et al., Appl. Phys. Lett. 51(15), 10/12/87, pp. 1138-1140.
"Substrate Temperature Dependence of GaAs, GainAs, and GaAlAs Growth Rates in Metalorganic Molecular Beam Epitaxy", Kobayashi et al., Appl. Phys. Lett. 51(23), 12/7/87, pp. 1907-1909.
"Incorporation Rates of Gallium and Aluminum on GaAs During Molecular Beam Epitaxy at High Substrate Temperatures", Fischer et al., J. Appl. Phys. 54(5), May, 1983, pp. 2508-2510.
"The Preparation of GaAs Thin-Film Optical Components by Molecular Beam Epitaxy Using Si Shadow Masking Technique", Tsang, W. T., Appl. Phys. Lett. 35(10), 11/15/79, pp. 792-795.

Affiliated with

Also associated with

Rating

Method for forming tapered laser or waveguide optoelectronic str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming tapered laser or waveguide optoelectronic str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming tapered laser or waveguide optoelectronic str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-448466