Method for forming step channel of semiconductor device

Details Method for forming step channel of semiconductor device Method for forming step channel of semiconductor device

2007-12-18

2007-12-18

Tran, Binh (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S736000, C438S740000, C438S743000, C438S744000

Reexamination Certificate

active

11148558

ABSTRACT:
A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a step channel region on a semiconductor substrate, forming a spacer on a sidewall of the hard mask layer pattern, and simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.

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Semiconductor Glossary; http://www.semiconductorglossary.com/default.asp?searchterm=etch+mask; pp. 1-2; 2001.

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