Method for forming soft adjacent layer (SAL) magnetoresistive (M

Etching a substrate: processes – Forming or treating article containing magnetically...

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216 41, 360113, B44C 122

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059851627

ABSTRACT:
A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.

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patent: 4713708 (1987-12-01), Krounbi
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patent: 5532892 (1996-07-01), Nix et al.
patent: 5753131 (1998-05-01), Choukh et al.

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