Method for forming sloped contact hole for semiconductor device

Details Method for forming sloped contact hole for semiconductor device Method for forming sloped contact hole for semiconductor device

1996-12-27

1998-12-01

Dote, Janis L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438640, 438723, H01L 21308, H01L 213065

Patent

active

058438459

ABSTRACT:
A method for forming a contact hole for a semiconductor device includes forming an insulation layer on a substrate and forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern. The insulation layer is etched using the photoresist film pattern as a mask using a high density plasma etcher of an inductively coupled plasma type. The photoresist film is removed to form a contact hole having a sloped side wall.

REFERENCES:
patent: 4671849 (1987-06-01), Chen et al.
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4814041 (1989-03-01), Auda
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5201993 (1993-04-01), Langley
patent: 5429710 (1995-07-01), Akiba et al.

Affiliated with

Also associated with

Rating

Method for forming sloped contact hole for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming sloped contact hole for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming sloped contact hole for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2395475