Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – With melting
Patent
1992-09-16
1994-05-24
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
With melting
505729, 505733, 505742, 427 62, 4274432, 156662, 423593, C30B 1902
Patent
active
053148690
ABSTRACT:
A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.
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N. Solaypappan A Thesis: "Optimization of Growth Conditions of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O8.sub.+x, Superconducting Films on NdGaO.sub.3 Substrates By LPE Technique And Their Characterization"; Submitted to the Office of Graduate Studies of Texas A & M University; Dec. 1991, pp. 1-86.
Pandey Raghvendra K.
Raina Kanwal
Solayappan Narayanan
King Roy V.
The Texas A & M University System
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