Method for forming silicon oxide layer

Details Method for forming silicon oxide layer Method for forming silicon oxide layer

2005-08-09

2005-08-09

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S255270, C427S578000

Reexamination Certificate

active

06926932

ABSTRACT:
A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion of the amorphous silicon layer into a superficial oxide layer.

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