Method for forming silicon oxide films

Details Method for forming silicon oxide films Method for forming silicon oxide films

1983-02-10

1985-05-21

Childs, Sadie L.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 96, 427255, 4272553, 4272554, B05D 512

Patent

active

045186308

ABSTRACT:
Method for forming silicon oxide layers on silicon surfaces with at least two oxidation steps, in which a first step (B.sub.1) is performed at a low oxidation temperature (T.sub.1) in an atmosphere containing a mixture of oxygen and hydrogen chloride with a low hydrogen chloride concentration, and in which a second step (B.sub.3) is performed at a high oxidation temperature (T.sub.2), characterized by the feature that the second step (B.sub.3) is performed in a dry oxygen atmosphere. An intermediate step (B.sub.2) may also be employed for heating from the low temperature to the high temperature.

REFERENCES:
patent: Re28385 (1975-04-01), Mayer
patent: 3837905 (1974-09-01), Hile et al.
patent: 4268538 (1981-05-01), Toole et al.
patent: 4275094 (1981-06-01), Takagi et al.
patent: 4293589 (1981-10-01), Takagi et al.
patent: 4293590 (1981-10-01), Takagi et al.
Osburn, "Dielectric Breakdown Properties of SiO.sub.2 Film Grown in Halogen and Hydrogen-Containing Environments", J. Electrochem. Soc., vol. 21, No. 6, pp. 809-814, Jun. 1974.
Hashimoto et al., "A Method of Forming Thin & Highly Reliable Gate Oxides", pp. 129-135, J. Electrochem. Soc., Jan. 1980.

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